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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1840
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA1840 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.
ORDERING INFORMATION
PART NUMBER PACKAGE Power TSSOP8
PA1840GR-9JG
FEATURES
* High voltage rating VDSS = 200 V * Power TSSOP8 package (Single circuit) * Gate voltage rating 30 V * Low on-state resistance RDS(on) = 0.5 MAX. (VGS = 10 V, ID = 1.5 A) * Low input capacitance Ciss = 320 pF TYP. (VDS = 10 V, VGS = 0 V) * Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
200 30 2.2 8.8 2.0 150 -55 to +150
V V A A W C C
Total Power Dissipation Channel Temperature Storage Temperature
Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on ceramic substrate of 5000 mm 2 x 1.1
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G14758EJ1V0DS00 (1st edition) Date Published November 2001 NS CP(K) Printed in Japan
(c)
2000
PA1840
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 160 V VGS = 10 V ID = 2.2 A IF = 2.2 A, VGS = 0 V IF = 2.2 A, VGS = 0 V di/dt = 50 A/s TEST CONDITIONS VDS = 200 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 1.5 A VGS = 10 V, ID = 1.5 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 100 V, ID = 1.5 A VGS = 10 V RG = 10 2.5 1.0 2.0 0.37 320 96 55 14 13 30 13 16 2.3 9.0 1.0 150 0.4 0.5 MIN. TYP. MAX. 100 10 4.5 UNIT
A A
V S pF pF pF ns ns ns ns nC nC nC V ns
C
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG VDD ID VGS 0 = 1 s Duty Cycle 1% ID
Wave Form
VGS VGS
Wave Form
IG = 2 mA VGS
90%
RL VDD
0
10%
PG.
90% 90%
50
ID
0 10% 10%
td(on) ton
tr td(off) toff
tf
2
Data Sheet G14758EJ1V0DS
PA1840
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80
ID - Drain Current - A
FORWARD BIAS SAFE OPERATING AREA 100
dT - Derating Factor - %
10
ID(pulse)
d ite im V) 0 )L on =1 S( RD VGS (@
PW
60
ID(DC)
=1
10 10 0m s DC
ms
1
Po we rD isp
ms
40
20
0.1
ira
tio
nL
0
0.01
30 60 120 90 TA - Ambient Temperature - C 150
TA = 25C Single Pulse Mounted on Ceramic 2 Substrate of 5000 mm x 1.1mm
im
ite
d
1
10
100
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10
TRANSFER CHARACTERISTICS 10 VDS = 10 V Pulsed
TA = -25C 25C 75C 125C
Pulsed
1
ID - Drain Current - A
ID - Drain Current - A
8 VGS = 10 V
0.1 0.01 0.001 0.0001
6
4
2 0 0.0 1.0 2.0 3.0 4.0 5.0
0
1
2
VDS - Drain to Source Voltage - V
3 4 5 6 7 8 9 VGS - Gate to Sorce Voltage - V
10
GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
4.5
VDS = 10 V ID = 1 mA
10
VDS = 10 V Pulsed
4.0
1 TA = -25C 25C 75C 125C
3.5
3.0
0.1
2.5 -50
0
50
100
150
0.01 0.01 0.1 1
ID - Drain Current - A
Tch - Channel Temperature - C
10
Data Sheet G14758EJ1V0DS
3
PA1840
RDS(on) - Drain to Source On-state Resistance -
1.0
RDS (on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1.0
ID = 1.5 A
VGS = 10 V Pulsed
0.8 TA = 125C
0.8
0.6 75C 0.4 25C -25C
0.6
VGS = 10 V
0.4
0.2
0.2 0 -50
0 0.01
0.1 1 ID - Drain Current - A
10
0
50
100
150
Tch - Channel Temperature - C
RDS (on) - Drain to Source On-state Resistance -
Ciss, Coss, Crss - Capacitance - pF
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.0 ID = 1.5 A Pulsed 0.8
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
f = 1 MHz VGS = 0 V
1000 Ciss 100 Coss 10 Crss
0.6
0.4
0.2
0 0 10 20
1 0.1 1 10 100 1000
VDS - Drain Source Voltage - V
VGS - Gate to Source Voltage - V
SWITCHING CHARACTERISTICS 1000
td(on), tr, td(off), tf - Switching Time - ns
100
tf td(off) td(on) tr
10
VDD = 100 V VGS = 10 V RG = 10
1 0.1
1 ID - Drain Current - A
10
4
Data Sheet G14758EJ1V0DS
PA1840
VDS - Drain to Source Voltage - V
140 120 100 80 60 40 20 0 2
VDD = 160 V 100 V 40 V
14 12 10 8
VGS
1
0.1
6 4
VDS
2 10 12 141516 18 20
0.01 0.4
0.6
0.8
1.0
1.2
1.4
1.6
45 6
8
VF(S-D) - Source to Drain Voltage - V
Qg - Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(ch-A) - Transient Thermal Resistance - C/W
Mounted on ceramic Substrate of 5000 mm2 x 1.1 mm Single Pulse
100
62.5C/W
10
1
0.1 0.001
0.01
0.1
1 PW - Pulse Width - s
10
100
1000
VGS - Gate to Source Voltage - V
IF - Source to Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 VGS = 0 V Pulsed
DYNAMIC INPUT CHARACTERISTICS 180 160
ID = 2.2 A VGS = 10 V
18 16
Data Sheet G14758EJ1V0DS
5
PA1840
PACKAGE DRAWING (Unit: mm)
Power TSSOP8
8 5 1, 8 : Drain 5 : Source 4 : Gate 2, 3, 6, 7: NC
1.2 MAX. 1.00.05 0.25 3 +5 -3 0.10.05 0.5 0.6 +0.15 -0.1
1
4
0.145 0.055
3.15 0.15 3.0 0.1
6.4 0.2 4.4 0.1 1.0 0.2
0.65 0.27
+0.03 -0.08
0.8 MAX. 0.10 M
0.1
Caution The terminal assignment is different from that of the NEC standard Power TSSOP8 package.
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
6
Data Sheet G14758EJ1V0DS
PA1840
[MEMO]
Data Sheet G14758EJ1V0DS
7
PA1840
* The information in this document is current as of November, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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